| PART |
Description |
Maker |
| STB3NC90Z-1 STP3NC90ZFP STP3NC90Z |
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STL6NK55Z |
N-CHANNEL 550V - 1.2ohm- 5.2A PowerFLATZener-Protected SuperMESH⑩Power MOSFET
N-CHANNEL 550V - 1.2ohm- 5.2A PowerFLAT Zener-Protected SuperMESHPower MOSFET
N-CHANNEL 550V - 1.2ohm- 5.2A PowerFLAT Zener-Protected SuperMESH?Power MOSFET
|
意法半导
STMicroelectronics
|
| FQPF9N90C FQP9N90C |
900V N-Channel Advance Q-FET C-Series
900V N-CHANNEL MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF6N90C FQP6N90C |
900V N-Channel Advance Q-FET C-Series
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A)
Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A)
CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）\u003d 1.2ohm，身份证\u003d 6.2A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQU2N90 FQD2N90 FQD2N90TF FQD2N90TM FQU2N90TU |
900V N-Channel QFET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| IRFBF20 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
|
IRF[International Rectifier]
|
| IRF5801 |
Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）最大值\u003d 2.2ohm，身份证\u003d 0.6A的）
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| STU7NB90I STU7NB90 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMesh⑩ MOSFET
N-CHANNEL 900V - 1.1 ohm - 7.3 A Max220/Max220I PowerMeshMOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRFBF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A)
Power MOSFET(Vdss=900V/ Rds(on)=3.7ohm/ Id=3.6A)
|
International Rectifier
|
| APT902RBN APT902R4BN |
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 7A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 900V五（巴西）直| 7A条（丁）|采用TO - 247AD
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 6.5A I(D) | TO-247AD
|
Unisonic Technologies Co., Ltd.
|
